AOB66613L - Alpha & Omega Semiconductors

AOB66613L 60V N-Channel MOSFET

• Trench Power AlphaSGTTM technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 60V 120A < 2.5mΩ < 3.0mΩ Applications • High Frequency Switching and Synchronous Rectification • BLDC 100% UIS Tested 100% Rg Tested Top View D .

Features

ion B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 120 120 480 44.5 35.5 48 346 260 104 8.3 5.3 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 12 50 Maximum Junction-to-Case Steady-State RqJC 0.4 Max 15 60 0.48 Units °C/W °C/W °C/W Rev.1.1: May 2024 www.aosmd.com Page 1 of 6 AOT66613L/AOB66613L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Paramet.