Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing.
energy G
EAS
908
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
dv/dt
40 5
TC=25°C Power Dissipation B Derate above 25oC
PD
250 2
AOTF12N50 12
* 8.4
*
50 0.4
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RqJA RqCS
Maximum Junction-to-Case
RqJC
* Drain current limited by maximum junction temperature.
AOT12N50/AOB12N50 65 0.5 0.5
AOTF12N50 65 -2.5
S
Units V V
A
A mJ mJ V/ns W W/ oC °C.
The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed .
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOB12N60FD |
Alpha & Omega Semiconductors |
12A N-Channel MOSFET | |
2 | AOB12N60FD |
INCHANGE |
N-Channel MOSFET | |
3 | AOB12N65 |
Alpha & Omega Semiconductors |
12A N-Channel MOSFET | |
4 | AOB12N65 |
INCHANGE |
N-Channel MOSFET | |
5 | AOB12N65L |
Alpha & Omega Semiconductors |
12A N-Channel MOSFET | |
6 | AOB12N65L |
INCHANGE |
N-Channel MOSFET | |
7 | AOB125A60L |
Alpha & Omega Semiconductors |
N-Channel Power Transistor | |
8 | AOB10B60D |
Alpha & Omega Semiconductors |
10A Alpha IGBT | |
9 | AOB10B65M1 |
Alpha & Omega Semiconductors |
10A Alpha IGBT | |
10 | AOB10N60 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET | |
11 | AOB10N60 |
INCHANGE |
N-Channel MOSFET | |
12 | AOB10T60P |
Alpha & Omega Semiconductors |
N-Channel MOSFET |