AOB125A60L - Alpha & Omega Semiconductors

AOB125A60L N-Channel Power Transistor

• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies • Micro inverter with DC/AC inverter topology TO-220 TO-220F Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% U.

Features

C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Diode reverse recovery VDS=0 to 400V,IF<=20A,Tj=25°C VGS ID IDM IAR EAR EAS dv/dt dv/dt di/dt Power Dissipation B TC=25°C Derate above 25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL AOT(B)125A60L AOTF125A60L 600 ±20 ±30 28 28
* 18 18
* 100 14 98 555 100 20 500 357 36 2.9 0.3 -55 to 150 300 Units V V V A A mJ mJ V/ns V/ns A/us W W/°C °C °C Thermal Characteristics Parameter Maximum .