AO3424 - Alpha & Omega Semiconductors

AO3424 N-Channel MOSFET

Product Summary The AO3424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) 30V 3.8A < 55mΩ < 65mΩ < 85mΩ SOT23 Top .

Features

s V V A W °C Units °C/W °C/W °C/W Rev 4: January 2011 www.aosmd.com Page 1 of 5 AO3424 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=3.8A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=3.5A VGS=2.5V, ID=1A Forward Transcond.