AO3421 - Alpha & Omega Semiconductors

AO3421 30V P-Channel MOSFET

Product Summary The AO3421 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -2.6A < 110mΩ < 180mΩ SOT23 Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25.

Features

osmd.com Page 1 of 5 AO3421 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C -1 µA -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 -1.9 -2.4 V ID(ON) On state drain current VGS=-10V, VDS=-5V -20 A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-2.6A TJ=125°C 77 110 mΩ 100 140 VGS=-4.5V, ID=-2A .