AO3415A - Alpha & Omega Semiconductors

AO3415A 20V P-Channel MOSFET

The AO3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) ESD protected -20V -4A < 41mΩ < 53mΩ < 65mΩ SO.

Features

80 100 52 Units ° C/W ° C/W ° C/W Rev 2: Sep 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO3415A Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V C TJ=55° VDS=0V, VGS= ±8V VDS=VGS, ID=-250µΑ VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-4A TJ=125° C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-4A VGS=-1.8V, ID=-2A VGS=-1.5V, ID=-1A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-4A IS=-1A,VGS=0V -0.3 -30 34 49 42 52 61 20 -0.64 -1 -2 600 VGS=0V, VDS=-10V, f=1MH.