The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS = 20V ID = 3A RDS(ON) < 62mΩ RDS(ON) < 70mΩ RDS(ON) < 85mΩ (VGS = 4.5V) (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.8V) SOT23 Top View Botto.
VDS = 20V ID = 3A RDS(ON) < 62mΩ RDS(ON) < 70mΩ RDS(ON) < 85mΩ (VGS = 4.5V) (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.8V) SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 3 2.5 16 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambien.
SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3414(AO3414) SOT-23 MOSFET IC Unit: mm Features VDS (V).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AO3410 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
2 | AO3411 |
Freescale |
P-Channel MOSFET | |
3 | AO3413 |
Alpha & Omega Semiconductors |
20V P-Channel MOSFET | |
4 | AO3414L |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
5 | AO3415 |
Alpha & Omega Semiconductors |
20V P-Channel MOSFET | |
6 | AO3415A |
Alpha & Omega Semiconductors |
20V P-Channel MOSFET | |
7 | AO3416 |
Alpha & Omega Semiconductors |
20V N-Channel MOSFET | |
8 | AO3416 |
Kexin |
N-Channel MOSFET | |
9 | AO3416L |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
10 | AO3418 |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
11 | AO3418 |
KERSEMI |
N-Channel MOSFET | |
12 | AO3418L |
KERSEMI |
N-Channel MOSFET |