FEATURES The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Plastic-Encapsulate Mosfets AO3402 N-Channel MOSFET D G S 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=25oC, unless otherwise note.
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Plastic-Encapsulate Mosfets AO3402 N-Channel MOSFET D G S 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A TA=25°C T =70°C Pulsed Drain Current B Power Dissipation A TA=25°C TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM PD TJ, TSTG Maximum .
SMD Type N-Channel Enhancement Mode Field Effect Transistor AO3402 (KO3402) MOSFIECT Features VDS (V) = 30V ID = 4 A .
AO3402 AO3402 N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 3.
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AO3400 |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
2 | AO3400 |
Kexin |
N-Channel MOSFET | |
3 | AO3400 |
HOTTECH |
N-Channel MOSFET | |
4 | AO3400 |
JinYu |
30V N-Channel MOSFET | |
5 | AO3400A |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
6 | AO3401 |
VBsemi |
P-Channel MOSFET | |
7 | AO3401 |
Alpha & Omega Semiconductors |
30V P-Channel MOSFET | |
8 | AO3401 |
HOTTECH |
P-Channel MOSFET | |
9 | AO3401 |
Kexin |
P-Channel MOSFET | |
10 | AO3401 |
JinYu |
30V P-Channel MOSFET | |
11 | AO3401A |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
12 | AO3401L |
Alpha & Omega Semiconductors |
P-Channel MOSFET |