AM5932N - Analog Power

AM5932N Dual N-Channel 30-V (D-S) MOSFET

Analog Power AM5932N Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA car.

Features

us Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC TA=70oC ID IDM IS TA=25oC TA=70oC PD TJ, Tstg 30 ± 20 6.4 5.2 ± 30 1.7 2.1 1.3 -55 to 150 V A A W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RθJA Maximum 62.5 80 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM5932_A Analog Power AM5932N SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE .