AM5920N - Analog Power

AM5920N Dual N-Channel 20-V (D-S) MOSFET

Analog Power AM5920N Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA car.

Features

TA=25oC TA=70oC ID IDM 20 ±8 V 5.0 4.1 A ± 30 Continuous Source Current (Diode Conduction)a IS 1.7 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 2.1 1.3 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RθJA Maximum 62.5 80 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM5920_A Analog Power AM5920N SPECIFICATIONS (TA =25oCUNLESS OTHERWISE N.