AM4435 - AiT Semiconductor

AM4435 -30V P-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench    -30V/-8.0A, RDS(ON)=16mΩ(typ)@VGS =-10V -30V/-5.0A, RDS(ON)=26mΩ(typ)@VGS =-4.5V Super high density cell design for extremely low technology to provide excellent RDS(ON). RDS(ON)  Exceptional on-resistanc.

Features

The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench
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 -30V/-8.0A, RDS(ON)=16mΩ(typ)@VGS =-10V -30V/-5.0A, RDS(ON)=26mΩ(typ)@VGS =-4.5V Super high density cell design for extremely low technology to provide excellent RDS(ON). RDS(ON)
 Exceptional on-resistance and maximum DC These devices are particularly suited for low current capability voltage application such as cellular phone and
 Full RoHS compliance notebook computer power management and other
 Available in SOP8 Package batter powered circ.