Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and .
n)a IS 2.9 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 3.1 W 2.2 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RθJA Maximum 40 80 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM4434_A Analog Power AM4434N SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AM4430N |
Analog Power |
N-Channel MOSFET | |
2 | AM4431P |
Analog Power |
P-Channel MOSFET | |
3 | AM4432N |
Analog Power |
N-Channel MOSFET | |
4 | AM4435 |
AiT Semiconductor |
-30V P-CHANNEL ENHANCEMENT MODE MOSFET | |
5 | AM4436N |
Analog Power |
MOSFET | |
6 | AM4437P |
Analog Power |
P-Channel MOSFET | |
7 | AM4438N |
Analog Power |
MOSFET | |
8 | AM4400N |
Analog Power |
N-Channel MOSFET | |
9 | AM4400NE |
Analog Power |
N-Channel MOSFET | |
10 | AM4401P |
Analog Power |
P-Channel MOSFET | |
11 | AM4402N |
Analog Power |
N-Channel MOSFET | |
12 | AM4403P |
Analog Power |
P-Channel MOSFET |