Analog Power AM3406N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products such as .
.1 IDM ±30 IS 1.7 TA=25oC TA=70oC PD 2.0 1.3 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol Maximum Units RTHJA 62.5 oC/W 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature April, 2004 - Rev. A PRELIMINARY 1 Publication Order Number: DS-AM3406_A Analog Power AM3406N SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Limits Unit Min Typ Max Sta.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AM3406 |
AXElite |
N-Channel Enhancement Mode MOSFET | |
2 | AM3406 |
AiT Semiconductor |
30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
3 | AM3400 |
AXElite |
N-Channel Enhancement Mode MOSFET | |
4 | AM3400 |
AiT Semiconductor |
30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
5 | AM3400A |
AiT Semiconductor |
30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
6 | AM3401 |
AXElite |
P-Channel Enhancement Mode MOSFET | |
7 | AM3401 |
AiT Semiconductor |
-30V P-CHANNEL ENHANCEMENT MODE MOSFET | |
8 | AM3402 |
AXElite |
N-Channel Enhancement Mode MOSFET | |
9 | AM3402N |
Analog Power |
MOSFET | |
10 | AM3403P |
Analog Power |
P-Channel MOSFET | |
11 | AM3404 |
AiT Semiconductor |
30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
12 | AM3405P |
Analog Power |
P-Channel MOSFET |