AM3406 - AiT Semiconductor

AM3406 30V N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES The AM3406 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power los.

Features

The AM3406 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
 30V/6.0A, RDS(ON) = 20mΩ(typ.) @VGS = 10V
 30V/4.8A, RDS(ON) = 27mΩ(typ.) @VGS = 4.5V
 Super high density cell design for extremely low RDS(ON)
 Exceptional on-resistance and Maximum D.