AM30N10 - INCHANGE

AM30N10 N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor AM30N10 ·FEATURES ·With TO-252( DPAK ) packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·LED backlighting ·Power supply ·Switching applications ·ABSOL.

Features

·With TO-252( DPAK ) packaging
·High speed switching
·Very high commutation ruggedness
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·LED backlighting
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 36 IS Continuous-Source Current 30 PD Total Dissipation 50 Tj Operating Junction Temperature -55~175 Tstg Storage Te.