AM30N10-50D - Analog Power

AM30N10-50D MOSFET

Analog Power N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and.

Features

e Conduction) IS TC=25 C PD Operating Junction and Storage Tem perature Range TJ, Tstg -55 to 175 C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Case a Maximum 50 3.0 Units o o RθJA RθJC C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM30N10-50_A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power AM30N10-50D SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Ga.