PIN CONNECTION The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and .
is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation
* Device Current
*
(TC ≤ 100°C)
438 12 48 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage
* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
* 0.4 °C/W
*Applies only to rated RF amplifier operation
August 1992
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AM2729-110
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC
Valu e Symbol Test Condi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AM2729-125 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS | |
2 | AM27256 |
AMD |
(AM2764A - AM27256) 8-Bit OTPROM | |
3 | Am2708 |
AMD |
EROM | |
4 | AM27128A |
AMD |
(AM2764A - AM27256) 8-Bit OTPROM | |
5 | AM2716 |
AMD |
2K x 8-Bit UV EPROM | |
6 | AM2716B |
AMD |
(AM2732B) 2048 x 8 Bit EPROM | |
7 | AM2716DC |
AMD |
2K X 8-Bit UV EPROM | |
8 | Am2732 |
AMD |
4096 x 8-Bit UV EPROM | |
9 | AM2732B |
AMD |
2048 x 8 Bit / 4096 x 8 Bit EPROM | |
10 | AM27512 |
ETC |
536x8-Bit UV Erasable PROM | |
11 | AM2764A |
AMD |
(AM2764A - AM27256) 8-Bit OTPROM | |
12 | AM27C010 |
Advanced Micro Devices |
1 Megabit (128 K x 8-Bit) CMOS EPROM |