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AM2729-110 - STMicroelectronics

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AM2729-110 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

PIN CONNECTION The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and .

Features

is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation
* Device Current
* (TC ≤ 100°C) 438 12 48 250 − 65 to +200 W A V °C °C Collector-Supply Voltage
* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
* 0.4 °C/W
*Applies only to rated RF amplifier operation August 1992 1/4 AM2729-110 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Valu e Symbol Test Condi.

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