AM2729-110 |
Part Number | AM2729-110 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | PIN CONNECTION The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is capable of operation ove... |
Features |
is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 100°C)
438 12 48 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.4 °C/W
*Applies only to rated RF amplifier operation
August 1992
1/4
AM2729-110
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC
Valu e Symbol Test Condi... |
Document |
AM2729-110 Data Sheet
PDF 61.89KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AM2729-125 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS | |
2 | AM27256 |
AMD |
(AM2764A - AM27256) 8-Bit OTPROM | |
3 | Am2708 |
AMD |
EROM | |
4 | AM27128A |
AMD |
(AM2764A - AM27256) 8-Bit OTPROM | |
5 | AM2716 |
AMD |
2K x 8-Bit UV EPROM |