AFN1062KS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applicat.
60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.3A , R DS(ON)=3.0Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( 2KV ) Diode design
–in SOT-523 package design
Application
Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. High saturation current capability. Direct Logic-Level Interface: TTL/CMOS Battery Operated Systems Solid-State Relays
Pin Define
Pin 1 2 3
Symbol G S D
Descr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AFN1010S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
2 | AFN1012 |
Alfa-MOS |
N-Channel MOSFET | |
3 | AFN1012E |
Alfa-MOS |
N-Channel MOSFET | |
4 | AFN1024 |
Alfa-MOS |
N-Channel MOSFET | |
5 | AFN1024E |
Alfa-MOS |
N-Channel MOSFET | |
6 | AFN1026S |
Alfa-MOS |
N-Channel MOSFET | |
7 | AFN1032 |
Alfa-MOS |
N-Channel MOSFET | |
8 | AFN1032E |
Alfa-MOS |
N-Channel MOSFET | |
9 | AFN1034 |
Alfa-MOS |
N-Channel MOSFET | |
10 | AFN1034E |
Alfa-MOS |
N-Channel MOSFET | |
11 | AFN1055S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
12 | AFN1072 |
Alfa-MOS |
N-Channel MOSFET |