AFN1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-523 ) AF.
20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-523 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones, Pagers Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN1012S52RG X SOT-523 ϡʳ AFN1012S52RG : .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AFN1010S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
2 | AFN1012E |
Alfa-MOS |
N-Channel MOSFET | |
3 | AFN1024 |
Alfa-MOS |
N-Channel MOSFET | |
4 | AFN1024E |
Alfa-MOS |
N-Channel MOSFET | |
5 | AFN1026S |
Alfa-MOS |
N-Channel MOSFET | |
6 | AFN1032 |
Alfa-MOS |
N-Channel MOSFET | |
7 | AFN1032E |
Alfa-MOS |
N-Channel MOSFET | |
8 | AFN1034 |
Alfa-MOS |
N-Channel MOSFET | |
9 | AFN1034E |
Alfa-MOS |
N-Channel MOSFET | |
10 | AFN1055S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
11 | AFN1062KS |
Alfa-MOS |
N-Channel MOSFET | |
12 | AFN1072 |
Alfa-MOS |
N-Channel MOSFET |