AFM08P2-000 - Alpha Industries

AFM08P2-000 Power GaAs MESFET

The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 800 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surf.

Features

s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC
  –40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding Chip thickness = 0.1 mm. Drain 0.110 mm 0.395 mm s High Associated Gain, 8.5 dB @ 18 GHz Gate 0.327 mm 0.655 mm 0.110 mm Description The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 800 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications i.