AFM04P2-000 - Alpha Industries

AFM04P2-000 Power GaAs MESFET

The AFM04P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surf.

Features

I 21 dBm Output Power @ 18 GHz I High Associated Gain, 9 dB @ 18 GHz I High Power Added Efficiency, 25% I Broadband Operation, DC
  –40 GHz I 0.25 µm Ti/Pd/Au Gates I Passivated Surface I Through-Substrate Via Hole Grounding 0.327 mm 0.655 mm Chip thickness = 0.1 mm. Drain 0.110 mm 0.395 mm Gate 0.110 mm Description The AFM04P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in o.