ACE1512E ACE Technology N-Channel MOSFET Datasheet, en stock, prix

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ACE1512E

ACE Technology
ACE1512E
ACE1512E ACE1512E
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Part Number ACE1512E
Manufacturer ACE Technology
Description The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. Features • VDS (...
Features
• VDS (V)=20V
• ID=6.5A (VGS=4.5V)
• RDS(ON)<21mΩ (VGS=4.5V)
• RDS(ON)<25mΩ (VGS=2.5V)
• RDS(ON)<33mΩ (VGS=1.8V)
• ESD Protected : 2000V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)*AC TA=25℃ TA=70℃ Drain Current (Pulsed)*B Power Dissipation TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Ratings Unit VDSS 20 V VGSS ±8 V 6.5 ID A 5.2 IDM 24 A 1 PD W 0.64 TJ/TSTG -55~150 ℃ Packaging Type TSOT-23-3 VER 1.1 1 ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Ordering in...

Document Datasheet ACE1512E Data Sheet
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