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·Collector-Emitter Breakdown Voltage: V(BR)CEO= -55V (Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= -0.5V (Max.)@ IC= -1A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w PARAMETE.
UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -55 V V(BR)CBO Collector-Base Breakdown Voltage IC= -500μA; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -500μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -0.5 V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain hFE Classifications R 40-80 O 70-140 w Y . w w n c . i m e s c is VEB= -5; IC= 0 IC= -0.5A; VCE= -5V 40 VCB= -80V; IE= 0 -50 μA -50 μA 240 120-240 isc Website：www.iscsemi.cn 2 www.DataSheet.in Free Data.
A614 - FGX
·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■APPLICATION：Low Frequency Power Amplifier. A614 —PNP silicon — Power Regulator ■■MAXIMUM RATINGS（Ta＝.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | A61 |
MACOM |
Cascadable Amplifier |
|
| 2 | A61-A230XF |
EPCOS |
2-Electrode-Arrester |
|
| 3 | A61-A350XF |
EPCOS |
2-Electrode-Arrester |
|
| 4 | A6100 |
ETC |
2.0A single lithium battery charge management chip |
|
| 5 | A611 |
MACOM |
Cascadable Amplifier |
|
| 6 | A6110 |
AiT Semiconductor |
LOW DROPOUT VOLTAGE REGULATOR |
|
| 7 | A6110A |
AiT Semiconductor |
LOW DROPOUT VOLTAGE REGULATOR |
|
| 8 | A6115 |
AiT Semiconductor |
LOW DROPOUT VOLTAGE REGULATOR |
|
| 9 | A6118 |
Allegro MicroSystems |
VACUUM FLUORESCENT DISPLAY DRIVER |
|
| 10 | A6120 |
AiT Semiconductor |
LOW DROPOUT VOLTAGE REGULATOR |
|
| 11 | A6130 |
EM MICROELECTRONIC |
High Efficiency Linear Power Supply |
|
| 12 | A6140 |
AiT Semiconductor |
CMOS LOW DROPOUT VOLTAGE REGULATOR |
|