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A2SHB - HAOHAI

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A2SHB N-Channel MOSFET

3.7A, 20V N  N  N-Channel Enhancement Mode Field Effect Transistor SMD   Features  ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V  ■High dense cell design for extremely low RDS(ON)  ■Rugged and reliable  ■Lead free product is acquired  ■SOT-23 Package  ■Marking Code: A2SHB   Case Material: Molded Plastic.   UL Flammability Classification Rating 94V-0 Internal Bloc.

Features

 
■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V  
■High dense cell design for extremely low RDS(ON)  
■Rugged and reliable  
■Lead free product is acquired  
■SOT-23 Package  
■Marking Code: A2SHB   Case Material: Molded Plastic.   UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302ALB(SOT-23) D HNM2302ALB N-Channel MOSFETs HNM2302ALB N-Channel Enhancement Mode Field Effect Transistor 2302 SI2302 AO2302 GMS2302 () G S SOT-23 S G SOT-23 DEVICE MARKING: A2SHB  
■ MAXIMUM RATINGS Characteristic Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Cu.

The same part from a different manufacturer

Datasheet A2SHB - Low Power Semi A2SHB

The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell den.

Datasheet A2SHB - SLS SEMICONDUCTOR A2SHB

SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOT-23 /SOT-23 Plastic-Encapsulate MOSFETS SLS2302(N-Channel Enhancement mode Fie.

Datasheet A2SHB - YUSHIN A2SHB

SOT-23 (SOT-23 Field Effect Transistors) GMS2302AL N-Channel Enhancement-Mode MOS FETs N MOS ■MAXIMUM RATINGS Char.

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