A1939 - Toshiba Semiconductor

A1939 2SA1939

2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm • • Complementary to 2SC5196 Recommend for 40-W high-fidelity audio frequency amplifier output stage. www.DataSheet4U.com Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collec.

Features

priate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1939 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage www.DataSheet4U.com Transition frequency Collector output capacitance VCE (sat).