A1931 - Toshiba

A1931 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications 2SA1931 Unit: mm • Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC4881 Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base.

Features

ime Symbol Test Conditions Min ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob VCB = −50 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −1 V, IC = 1 A VCE = −1 V, IC = −3 A IC = −2 A, IB = −0.2 A IC = −2 A, IB = −0.2 A VCB = −1 V, IC = −1 A VCB = −10 V, IE = 0, f = 1 MHz IB1 10 Ω ton 20 µs Input IB2 Output IB2 IB1 tstg VCC = −30 V ― ― −50 100 60 ― ― ― ― ― ― −IB1 = IB2 = 0.15 A, duty cycle ≤ 1% tf ― Typ. ― ― ― ― ― −0.2 −0.9 60 100 0.1 1.0 0.1 Max −1 −1 ― 300 ― −0.4 −1.5 ― ― Unit µA µA V V V MHz pF ― ― µs ― 1 2005-07-27 Marking A1931 Part No. (or abbrev.