A1350 - Hitachi Semiconductor

A1350 2SA1350

2SA1350 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • HF amplefier Outline SPAK 12 3 1. Emitter 2. Collector 3. Base 2SA1350 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage tempera.

Features

SA1350 is grouped by hFE as follows. B CD 100 to 200 160 to 320 250 to 500 Max Unit Test conditions —V IC =
  –10 µA, IE = 0 —V IC =
  –1 mA, RBE = ∞ —V IE =
  –10 µA, IC = 0
  –0.5
  –0.5 500
  –0.75
  –0.2 µA µA V V VCB =
  –18 V, IE = 0 VEB =
  –2 V, IC = 0 VCE =
  –12 V, IC =
  –2 mA VCE =
  –12 V, IC =
  –2 mA IC =
  –10 mA, IB =
  –1 mA — MHz VCE =
  –12 V, IC =
  –2 mA 4.5 pF VCB =
  –10 V, IE = 0, f = 1 MHz 5.0 dB VCE =
  –6 V, IC =
  –0.1 mA Rg = 1 kΩ, f = 1 kHz See characteristic curves of 2SA1031. 2 Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 300 200 100 0 50 100 150 Ambient .