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Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. Switching Test Circuit Package Dimensions unit:mm 2003A [2SA1319/2SC3332] ( ) : 2SA1319 (For PNP, .
· Hgih breakdown voltage.
· Excellent hFE linearity.
· Wide ASO and highly resistant to breakdown.
· Adoption of MBIT process.
Switching Test Circuit
Package Dimensions
unit:mm 2003A
[2SA1319/2SC3332]
( ) : 2SA1319
(For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F)
Specifications
JEDEC : TO-92 EIAJ : SC-43 SANYO : NP
B : Base C : Collector E : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature .
A1319 - Allegro
New applications for linear output Hall-effect sensors, such as displacement and angular position, require higher accura.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | A1310AQ |
Sony |
Single Chip Processor |
|
| 2 | A1313 |
Toshiba |
2SA1313 |
|
| 3 | A1315 |
Allegro |
Linear Hall-Effect Sensor |
|
| 4 | A1315 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 5 | A1318 |
SeCoS |
PNP Transistor |
|
| 6 | A1318 |
JCST |
PNP Transistor |
|
| 7 | A1318 |
Transys |
PNP Transistor |
|
| 8 | A1318 |
Sanyo Semicon Device |
PNP/NPN Silicon Transistor |
|
| 9 | A1318 |
Allegro |
Linear Hall-Effect Sensor |
|
| 10 | A13 |
Allwinner Technology |
ARM Cortex-A8 |
|
| 11 | A1300 |
Toshiba Semiconductor |
2SA1300 |
|
| 12 | A1301 |
Allegro MicroSystems |
Continuous-Time Ratiometric Linear Hall Effect Sensor |
|