A1015Y - ON Semiconductor

A1015Y PNP Epitaxial Silicon Transistor

98AON13879G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in.

Features

• Low−Frequency Amplifier
• Collector−Base Voltage: VCBO = −50 V
• Complement to KSC1815
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO Collector−Base Voltage −50 V VCEO Collector−Emitter Voltage −50 V VEBO Emitter−Base Voltage −5 V IC Collector Current −150 mA IB Base Current −50 mA TJ Junction Temperature 150 °C TSTG Storage Temperature Range −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any.