98AON13879G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in.
• Low−Frequency Amplifier
• Collector−Base Voltage: VCBO = −50 V
• Complement to KSC1815
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO Collector−Base Voltage
−50
V
VCEO Collector−Emitter Voltage
−50
V
VEBO Emitter−Base Voltage
−5
V
IC
Collector Current
−150
mA
IB
Base Current
−50
mA
TJ
Junction Temperature
150
°C
TSTG Storage Temperature Range
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | A1015 |
DOESHARE |
Plastic-Encapsulate Transistors | |
2 | A1015 |
WEITRON |
PNP General Purpose Transistors | |
3 | A1015 |
ON Semiconductor |
PNP Epitaxial Silicon Transistor | |
4 | A1015 |
NXP |
PNP general purpose transistor | |
5 | A1015 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
6 | A1015 |
Elite |
PNP Epitaxial Silicon Transistor | |
7 | A1015 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
8 | A1015 |
Jiangsu Changjiang |
PNP Transistor | |
9 | A1015 |
SeCoS |
PNP Transistor | |
10 | A1015L |
Toshiba Semiconductor |
Silicon PNP Transistor | |
11 | A1015Y |
ON Semiconductor |
PNP Epitaxial Silicon Transistor | |
12 | A101 |
Tyco Electronics |
5 TO 100 MHZ TO-8 CASCADABLE AMPLIFIER |