9916H - Advanced Power Electronics

9916H AP9916H

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous .

Features

bient Max. Max. Value 2.5 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 200227032 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr AP9916H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 18 0.5 - Typ. 0.03 18 17.5 1.2 7.9 7.3 98 25.6 98 527 258 112 Max. Units 25 40 1 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Sou.