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9916H |
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| Part Number | 9916H |
| Manufacturer | Advanced Power Electronics |
| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D ... |
| Features |
bient Max. Max. Value 2.5 110 Unit ℃/W ℃/W
Data and specifications subject to change without notice
200227032
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
AP9916H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 18 0.5 -
Typ. 0.03 18 17.5 1.2 7.9 7.3 98 25.6 98 527 258 112
Max. Units 25 40 1 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Sou... |
| Document |
 9916H Data Sheet
PDF 144.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 9916H |
Advanced Power Electronics |
AP9916H |
|
| 2 | 9915H |
Advanced Power Electronics |
AP9915H |
|
| 3 | 9918H |
Silicon Standard |
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET |
|
| 4 | 9918H |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | 99-3432-200-04 |
Binder |
Sensor connectors |
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