8N60B - IXYS Corporation

8N60B IXGT28N60B

Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°.

Features

• International standard packages
• Low VCE(sat) - for minimum on-state conduction losses
• High current handling capability
• MOS Gate turn-on - drive simplicity
• Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications
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• AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 6.