INCHANGE Semiconductor www.DataSheet4U.com isc N-Channel Mosfet Transistor isc Product Specification 8N60 ·FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficienc.
·Drain Current
–ID= 7.5A@ TC=25℃
·Drain Source Voltage: VDSS= 600V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 600 ±20 7.5 30 147 150 -55~150 UNIT V V A A W ℃ ℃
·THERMAL.
N-Channel Power MOSFET (8A, 600Volts) The Nell 8N60 is a three-terminal silicon device with current conduction capabil.
8N60(F,B,H) 8A mps,600 Volts N-CHANNEL MOSFET FEATURE 8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss .
The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast swit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 8N60-CBQ |
UTC |
N-CHANNEL MOSFET | |
2 | 8N60-E |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
3 | 8N60-MH |
UTC |
N-CHANNEL POWER MOSFET | |
4 | 8N60A |
nELL |
N-Channel Power MOSFET | |
5 | 8N60AF |
nELL |
N-Channel Power MOSFET | |
6 | 8N60B |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
7 | 8N60B |
IXYS Corporation |
IXGT28N60B | |
8 | 8N60C |
Fairchild Semiconductor |
FQB8N60C | |
9 | 8N60F |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
10 | 8N60H |
nELL |
N-Channel Power MOSFET | |
11 | 8N60H |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
12 | 8N60K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |