This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. NG14G22D1D2RSS13S21 Product status link STL8DN6LF3 Product summary Order code STL8DN6LF3 Marking 8DN6LF3 Package PowerFLAT 5x6 double island Packing Tape and reel DS86.
Order code STL8DN6LF3
VDS 60 V
RDS(on) max. 30 mΩ
ID 7.8 A
1 S2
Drain on rear side
2 G2
3 S1
4 G1
8 D2
7
6 D1
5
• AEC-Q101 qualified
• Logic level VGS(th)
• 175 °C maximum junction temperature
• 100% avalanche rated
• Wettable flank package
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
NG14G22D1D2RSS13S21
Product status link STL8DN6LF3
Product summary
Order code
STL8DN6LF3
Marking
8DN6LF3
Pack.