8DN10LF3 - STMicroelectronics

8DN10LF3 Automotive-grade dual N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Order code STL8DN10LF3 Marking 8DN10LF3 Table 1: Device summary Package PowerFLATTM 5x6 double island June 2016 DocID023009 Rev 8 This is information on a product in full p.

Features

Order code STL8DN10LF3 VDS 100 V RDS(on) max. 35 mΩ ID 7.8 A
 Designed for automotive applications and AEC-Q101 qualified
 Logic level VGS(th)
 175 °C maximum junction temperature
 100% avalanche rated
 Wettable flank package Applications
 Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Order code STL8DN10LF3 Marking 8DN10LF3 Table 1: Device summary Package PowerFLATTM 5x6 double island June 2016 DocID023009 Rev .