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These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
• Channel temperature 175 degree rated
• Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
• Low input capacitance Ciss = 7300 pF TYP.
• Built-in gate protection diode (TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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Document No. D14236EJ8V0DS00 (8th edition) Date Published October 2007 NS .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 88N14 |
Unisonic Technologies |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 2 | 88N18 |
Unisonic Technologies |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 3 | 88N20 |
UTC |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 4 | 88N21 |
Unisonic Technologies |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 5 | 88N22 |
UTC |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 6 | 88N23 |
UTC |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 7 | 88N24 |
UTC |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 8 | 88N24 |
Unisonic Technologies |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 9 | 88N25 |
UTC |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 10 | 88N26 |
UTC |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 11 | 88N27 |
Unisonic Technologies |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 12 | 88N28 |
Unisonic Technologies |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|