N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT6N06T in SOT223. 1.2 Features s Low on-state resistance s Fast switching s Low QGD s Surface mounting package. 1.3 Applications s DC to DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 8.3 .
s Low on-state resistance s Fast switching s Low QGD s Surface mounting package. 1.3 Applications s DC to DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 8.3 W s ID ≤ 5.5 A s RDSon ≤ 150 mΩ 2. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbol Description Simplified outline gate (g) drain (d) 4 source (s) drain (d) Symbol d g MBB076 s 1 2 3 Top view MSB002 - 1 SOT223 Philips Semiconductors PHT6N06T TrenchMOS™ standard level FET 3. Limiting values Table 2: Limiting values In accordance wit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 6N04N009 |
Infineon |
Power-Transistor | |
2 | 6N-60 |
TXC |
7 x 5 mm SMD Seam Cxo Tyoe / 6N Series | |
3 | 6N10 |
Unisonic Technologies |
N-Channel MOSFET | |
4 | 6N100-FC |
UTC |
1000V N-CHANNEL POWER MOSFET | |
5 | 6N1135 |
Vishay Siliconix |
High Speed Optocoupler | |
6 | 6N1136 |
Vishay Siliconix |
High Speed Optocoupler | |
7 | 6N134 |
Hewlett-Packard |
Hermetically Sealed / High Speed / High CMR / Logic Gate Optocouplers | |
8 | 6N135 |
Everlight |
8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER | |
9 | 6N135 |
Broadcom |
High-Speed Optocouplers | |
10 | 6N135 |
LITE-ON |
High Speed Optocouplers | |
11 | 6N135 |
Vishay |
High Speed Optocoupler | |
12 | 6N135 |
Toshiba Semiconductor |
IRED & PHOTO IC |