6N04N009 - Infineon

6N04N009 Power-Transistor

IAUC120N04S6N009 OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.9 m 120 A PG-TDSON-8 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) 1 1 • 100% Avala.

Features

• OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.9 m 120 A PG-TDSON-8
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant) 1 1
• 100% Avalanche tested Type IAUC120N04S6N009 Package PG-TDSON-8 Marking 6N04N009 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, s.