New Product SUD50N04-07L Vishay Siliconix N-Channel 40-V (D-S), 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 40 0.0074 at VGS = 10 V 0.0011 at VGS = 4.5 V ID (A)c 65 54 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Threshold Available RoHS* COMPLIANT TO-252 D GDS Top View Drain Connected to Tab Ordering Infor.
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• Low Threshold
Available
RoHS
*
COMPLIANT
TO-252
D
GDS Top View
Drain Connected to Tab
Ordering Information: SUD50N04-07L SUD50N04-07L (Lead (Pb)-free)
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 100 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Power Dissipation
TC = 25 °C
PD
Operating Junction and Storage T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 50N02-09 |
Vishay Siliconix |
SUB50N02-09 | |
2 | 50N024 |
Vishay Siliconix |
SUD50N024 | |
3 | 50N02409PU54A |
Vishay Intertechnology |
SU50N02409PU54A | |
4 | 50N025-05P |
Vishay Siliconix |
SUD50N025-05P | |
5 | 50N03 |
Tuofeng |
Power Transistor | |
6 | 50N03 |
KIA |
N-CHANNEL MOSFET | |
7 | 50N03 |
GFO |
MOSFET | |
8 | 50N035 |
Bay Linear |
N-Channel FET | |
9 | 50N03LT |
NXP Semiconductors |
PHP50N03LT | |
10 | 50N06 |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
11 | 50N06 |
ETC |
Low voltage high current power MOSFET | |
12 | 50N06 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |