The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. The TO-220 is offered in a 3-pin is unive.
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• Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON)
VDSS = 30V RDS (ON) = 0.013 Ω ID = 52A Ordering Information
Device
50N035T 50N035S
Package
TO-220 TO-263 ( D2 )
Temp.
0 to 150°C 0 to 150°C
Absolute Maximum Rating
Symbol
ID
Parameter
Drain Current Continues Pulsed Drain-Source Voltage Gate Source Voltage Total Power Dissipation @ TC =25°C Derate above 25°C Operating and Storage Temperature Range
Max
52 156 30 ±2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 50N03 |
Tuofeng |
Power Transistor | |
2 | 50N03 |
KIA |
N-CHANNEL MOSFET | |
3 | 50N03 |
GFO |
MOSFET | |
4 | 50N03LT |
NXP Semiconductors |
PHP50N03LT | |
5 | 50N02-09 |
Vishay Siliconix |
SUB50N02-09 | |
6 | 50N024 |
Vishay Siliconix |
SUD50N024 | |
7 | 50N02409PU54A |
Vishay Intertechnology |
SU50N02409PU54A | |
8 | 50N025-05P |
Vishay Siliconix |
SUD50N025-05P | |
9 | 50N04-07L |
Vishay |
SUD50N04-07L | |
10 | 50N06 |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
11 | 50N06 |
ETC |
Low voltage high current power MOSFET | |
12 | 50N06 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |