This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status .
Order code STD4NK100Z
VDS 1000 V
RDS(on) max. 6.8 Ω
ID 2.2 A
• AEC-Q101 qualified
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
Applications
• Switching applications
AM01476v1_tab
Description
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Pro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 4NK60ZFP |
STMicroelectronics |
N-Channel Power MOSFET | |
2 | 4N03L02 |
Infineon |
Power-Transistor | |
3 | 4N041R1 |
Infineon |
Power-Transistor | |
4 | 4N04R7 |
Infineon |
Power-Transistor | |
5 | 4N04R8 |
Infineon |
Power-Transistor | |
6 | 4N0607 |
VBsemi |
TO220 N-Channel MOSFET | |
7 | 4N0607 |
VBsemi |
TO252 N-Channel MOSFET | |
8 | 4N10 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 4N100 |
UTC |
N-CHANNEL MOSFET | |
10 | 4N100-FC |
UTC |
N-CHANNEL POWER MOSFET | |
11 | 4N100-FCQ |
UTC |
N-CHANNEL MOSFET | |
12 | 4N120 |
UTC |
N-CHANNEL MOSFET |