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4N0607-VB TO220 4N0607-VB TO220 Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: TO-220AB D www.VBsemi.com G GDS S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherw.
• 175 °C Junction Temperature
• TrenchFET® Power MOSFET
• Material categorization:
TO-220AB
D
www.VBsemi.com
G
GDS
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
120 90
Pulsed Drain Current
IDM
350
A
Continuous Source Current (Diode Conduction)
IS
70a
Avalanche Current
IAS
50
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
PD
136 3b, 8..
4N0607 - VBsemi
4N0607-VB TO252 4N0607-VB TO252 Datasheet N-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RD.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 4N03L02 |
Infineon |
Power-Transistor |
|
| 2 | 4N041R1 |
Infineon |
Power-Transistor |
|
| 3 | 4N04R7 |
Infineon |
Power-Transistor |
|
| 4 | 4N04R8 |
Infineon |
Power-Transistor |
|
| 5 | 4N10 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 4N100 |
UTC |
N-CHANNEL MOSFET |
|
| 7 | 4N100-FC |
UTC |
N-CHANNEL POWER MOSFET |
|
| 8 | 4N100-FCQ |
UTC |
N-CHANNEL MOSFET |
|
| 9 | 4N120 |
UTC |
N-CHANNEL MOSFET |
|
| 10 | 4N135-P |
UTC |
N-CHANNEL POWER MOSFET |
|
| 11 | 4N150 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 12 | 4N150 |
STMicroelectronics |
N-CHANNEL MOSFET |
|