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·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS.
S V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=4.4A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.2A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time ID=4A; VDD=320V; RL=25Ω MIN TYPE MAX UNIT 650 V 2.0 4.0 V 1.4 V 2.5 Ω ±100 nA 10 µA 100 35 ns 80 60 NOTICE： ISC reserves the rights to make changes of the content herei.
4N65 - PINGWEI
4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE 4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A Low gate charge Low Ci.
4N65 - Unisonic Technologies
The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low ga.
4N65 - JINAN JINGHENG
R SEMICONDUCTOR 4N65 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<2.4Ω @ VGS=10V ● Fast switching capability ● Lead .
4N65 - Zibo Seno
4N60 4N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 4N60 |
ROUM |
4A 600V N-channel Enhancement Mode Power MOSFET |
|
| 2 | 4N60 |
Zibo Seno |
Power MOSFET |
|
| 3 | 4N60 |
KIA |
N-CHANNEL MOSFET |
|
| 4 | 4N60 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 5 | 4N60 |
nELL |
N-Channel Power MOSFET |
|
| 6 | 4N60 |
WEITRON |
Surface Mount N-Channel Power MOSFET |
|
| 7 | 4N60 |
INCHANGE |
N-Channel Mosfet Transistor |
|
| 8 | 4N60 |
HAOHAI |
N-Channel MOSFET |
|
| 9 | 4N60-C |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 10 | 4N60-CB |
UTC |
N-CHANNEL MOSFET |
|
| 11 | 4N60-E |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 12 | 4N60-N |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|