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·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage .
Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=4.4A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.2A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time ID=4A; VDD=300V; RL=25Ω MIN TYPE MAX UNIT 600 V 2.0 4.0 V 1.4 V 2.5 Ω ±100 nA 10 µA 45 100 13 35 ns 35 80 25 60 NOTICE： ISC reserves the rights to make changes of the content herein the d.
4N60 - KIA
The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low ga.
4N60 - nELL
The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-.
4N60 - ROUM
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, .
4N60 - UTC
The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,.
4N60 - WEITRON
The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time,.
4N60 - Zibo Seno
4N60 4N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate.
4N60 - HAOHAI
4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 4N60-C |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | 4N60-CB |
UTC |
N-CHANNEL MOSFET |
|
| 3 | 4N60-E |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 4 | 4N60-N |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 5 | 4N60-Q |
UTC |
N-CHANNEL POWER MOSFET |
|
| 6 | 4N60-R |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 7 | 4N60-S |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 8 | 4N60-TA5 |
UTC |
600V N-CHANNEL POWER MOSFET |
|
| 9 | 4N600 |
ETC |
N-Channel MOSFET |
|
| 10 | 4N60A |
nELL |
N-Channel Power MOSFET |
|
| 11 | 4N60AF |
nELL |
N-Channel Power MOSFET |
|
| 12 | 4N60AS |
INCHANGE |
N-Channel MOSFET |
|