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The UTC 4N65-TC1 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 4N65-TC1 is generally applied in high eff.
* RDS(ON) ≤ 2.7Ω @ VGS=10V, ID=2.0A
* High Switching Speed
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N65L-TM3-T
4N65G-TM3-T
4N65L-TN3-R
4N65G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-251 TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 8
QW-R205-572.A
4N65-TC1
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 4N65-C |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | 4N65-E |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 3 | 4N65-ML |
UTC |
N-CHANNEL POWER MOSFET |
|
| 4 | 4N65-N |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 5 | 4N65-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 6 | 4N65-R |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 7 | 4N65-S |
UTC |
N-CHANNEL POWER MOSFET |
|
| 8 | 4N65-U |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 9 | 4N65 |
Zibo Seno |
Power MOSFET |
|
| 10 | 4N65 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 11 | 4N65 |
Unisonic Technologies |
N-Channel Power MOSFET |
|
| 12 | 4N65 |
JINAN JINGHENG |
650V N Channel Power MOSFET |
|