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The UTC 4N60-TA5 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to D.
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.0A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
4N60L-TM3-T
4N60G-TM3-T
Pin Assignment: G: Gate D: Drain S: Source
Package TO-251
Pin Assignment
1
2
3
G
D
S
Packing Tube
MARKING
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QW-R205-184 .a
4N60-TA5
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 4N60-C |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | 4N60-CB |
UTC |
N-CHANNEL MOSFET |
|
| 3 | 4N60-E |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 4 | 4N60-N |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 5 | 4N60-Q |
UTC |
N-CHANNEL POWER MOSFET |
|
| 6 | 4N60-R |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 7 | 4N60-S |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 8 | 4N60 |
ROUM |
4A 600V N-channel Enhancement Mode Power MOSFET |
|
| 9 | 4N60 |
Zibo Seno |
Power MOSFET |
|
| 10 | 4N60 |
KIA |
N-CHANNEL MOSFET |
|
| 11 | 4N60 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 12 | 4N60 |
nELL |
N-Channel Power MOSFET |
|