4N150-P - UTC

4N150-P N-CHANNEL POWER MOSFET

The UTC 4N150-P is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC conve.

Features

* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=2.0A
* High Switching Speed
 SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 4N150L-T47-T 4N150G-T47-T TO-247 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S Packing Tube
 MARKING www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-840.a 4N150-P Preliminary Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1500 V Gate.