4N150-P |
Part Number | 4N150-P |
Manufacturer | UTC |
Description | The UTC 4N150-P is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalan... |
Features |
* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=2.0A * High Switching Speed
SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 4N150L-T47-T 4N150G-T47-T TO-247 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-840.a 4N150-P Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1500 V Gate... |
Document |
4N150-P Data Sheet
PDF 199.75KB |
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